MountingChassis Mount, Through Hole, Screw
Power100mW
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Technical Specifications
TT OPB825A technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Max Breakdown Voltage
30V
Max Collector Current
30mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Mount
Chassis Mount, Through Hole, Screw
Number of Elements
1
Output Configuration
Phototransistor
Output Current
30mA
Package Quantity
50
Packaging
Bulk
Power Dissipation
100mW
Reverse Breakdown Voltage
2V
RoHS Compliant
Yes
Sensing Distance
0.16inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OPB825A Datasheet
Download the complete datasheet for TT OPB825A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.