Transistor output, 1-channel slotted photointerrupter featuring a 3.18mm slot width and 880nm infrared sensing. Offers a 30V collector-emitter breakdown voltage and a 50mA forward current. Designed for chassis mount with screw attachment, this component operates within a -40°C to 80°C temperature range and has a 100mW power dissipation. Packaged in bulk, it is RoHS compliant.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB842W55Z technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.125inch |
| Touchscreen | Infrared (IR) |
| Wavelength | 880nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB842W55Z Datasheet
Download the complete datasheet for TT OPB842W55Z to view detailed technical specifications.
No datasheet is available for this part.
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