MountingThrough Hole
Power100mW
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Technical Specifications
TT OPB854A1 technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Max Collector Current
30mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Mount
Through Hole
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reverse Breakdown Voltage
2V
RoHS Compliant
Yes
Sensing Distance
2.54mm
Touchscreen
Infrared (IR)
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OPB854A1 Datasheet
Download the complete datasheet for TT OPB854A1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.