MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB857Z technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Input Current
20mA
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Operating Temperature
80°C
Min Operating Temperature
-40°C
Mount
Chassis Mount, Screw
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Breakdown Voltage
2V
Reverse Voltage (DC)
2V
RoHS Compliant
Yes
Sensing Distance
0.15inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OPB857Z Datasheet
Download the complete datasheet for TT OPB857Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.