The OPB860N11 phototransistor is a slotted photointerrupter with a wavelength of 880nm and a maximum operating temperature of 85°C. It has a collector-emitter breakdown voltage of 30V and a power dissipation of 100mW. The device is mounted through a hole and is compliant with RoHS regulations. It is suitable for use in applications where an infrared signal is required, with a forward current of up to 50mA.
MountingChassis Mount, Through Hole
Power100mW
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Technical Specifications
TT OPB860N11 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | Yes |
| Touchscreen | Infrared (IR) |
| Wavelength | 880nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB860N11 Datasheet
Download the complete datasheet for TT OPB860N11 to view detailed technical specifications.
No datasheet is available for this part.