The OPB860N55 is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It is designed for chassis mount through-hole applications and has a power dissipation of 100mW. The device operates within a temperature range of -40°C to 85°C and is compliant with RoHS regulations. The phototransistor is sensitive to infrared light with a wavelength of 880nm and has a sensing distance of 0.125inch.
MountingChassis Mount, Through Hole
Power100mW
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Technical Specifications
TT OPB860N55 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.125inch |
| Touchscreen | Infrared (IR) |
| Wavelength | 880nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB860N55 Datasheet
Download the complete datasheet for TT OPB860N55 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.