The OPB861T51 is a phototransistor sensor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It operates within a temperature range of -40°C to 85°C and is designed for through hole mounting. This RoHS compliant device has a power dissipation of 100mW and is suitable for infrared (IR) touchscreen applications at a wavelength of 890nm.
MountingThrough Hole
Power100mW
Quick Jump:
Technical Specifications
TT OPB861T51 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB861T51 Datasheet
Download the complete datasheet for TT OPB861T51 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.