TT
OPB861T55
Transistor Output Slotted Switch, 1-Channel, 3.11mm Slot Width, ROHS COMPLIANT, PLASTIC PACKAGE-4
MountingThrough Hole, Screw
Power100mW
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Technical Specifications
TT OPB861T55 technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Height
10.8mm
Length
24.61mm
Max Collector Current
30mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole, Screw
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reverse Breakdown Voltage
2V
RoHS Compliant
Yes
Touchscreen
Infrared (IR)
Wavelength
890nm
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
TT OPB861T55 Datasheet
Download the complete datasheet for TT OPB861T55 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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