Transistor output slotted optical sensor featuring a 3.11mm slot width and 1-channel phototransistor output. This component operates with a 30V collector-emitter breakdown voltage and a 50mA forward current, supporting a maximum collector current of 30mA. Designed for through-hole mounting, it functions across an operating temperature range of -40°C to 85°C. The sensor utilizes infrared (IR) touchscreen technology with an 890nm wavelength and a sensing distance of 0.125 inches. It is RoHS compliant and supplied in a plastic package.
MountingChassis Mount, Through Hole
Power100mW
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Technical Specifications
TT OPB871N55 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Input Current | 20mA |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Reach SVHC Compliant | No |
| Reverse Breakdown Voltage | 2V |
| Reverse Voltage (DC) | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.125inch |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB871N55 Datasheet
Download the complete datasheet for TT OPB871N55 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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