Transistor output slotted optical sensor featuring a 3.11mm slot width and 1-channel phototransistor output. This component operates with a 30V collector-emitter breakdown voltage and a 50mA forward current, supporting a maximum collector current of 30mA. Designed for through-hole mounting, it functions across an operating temperature range of -40°C to 85°C. The sensor utilizes infrared (IR) touchscreen technology with an 890nm wavelength and a sensing distance of 0.125 inches. It is RoHS compliant and supplied in a plastic package.
MountingChassis Mount, Through Hole
Power100mW
Quick Jump:
Technical Specifications
TT OPB871N55 technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Input Current
20mA
Max Breakdown Voltage
30V
Max Collector Current
30mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Mount
Chassis Mount, Through Hole
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Reach SVHC Compliant
No
Reverse Breakdown Voltage
2V
Reverse Voltage (DC)
2V
RoHS Compliant
Yes
Sensing Distance
0.125inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OPB871N55 Datasheet
Download the complete datasheet for TT OPB871N55 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
