Transistor output slotted optical sensor featuring a 1-channel, 1-element phototransistor design. This component offers a 30V collector-emitter breakdown voltage and a 50mA forward current. With a 3.11mm slot width and 890nm wavelength, it operates within a -40°C to 85°C temperature range. Mounting options include chassis mount, through hole, and screw, with a 100mW power dissipation.
MountingChassis Mount, Through Hole, Screw
Power100mW
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Technical Specifications
TT OPB880T51Z technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Height
15.75mm
Input Current
20mA
Lead Free
Lead Free
Length
24.63mm
Max Breakdown Voltage
30V
Max Collector Current
30mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Mount
Chassis Mount, Through Hole, Screw
Number of Channels
1
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Breakdown Voltage
2V
Reverse Voltage (DC)
2V
RoHS Compliant
Yes
Sensing Distance
0.125inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
TT OPB880T51Z Datasheet
Download the complete datasheet for TT OPB880T51Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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