Transistor output slotted optical sensor featuring a 1-channel, 1-element phototransistor design. This component offers a 30V collector-emitter breakdown voltage and a 50mA forward current. With a 3.11mm slot width and 890nm wavelength, it operates within a -40°C to 85°C temperature range. Mounting options include chassis mount, through hole, and screw, with a 100mW power dissipation.
MountingChassis Mount, Through Hole, Screw
Power100mW
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Technical Specifications
TT OPB880T51Z technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Height | 15.75mm |
| Input Current | 20mA |
| Lead Free | Lead Free |
| Length | 24.63mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Through Hole, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Breakdown Voltage | 2V |
| Reverse Voltage (DC) | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.125inch |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
| Width | 6.35mm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB880T51Z Datasheet
Download the complete datasheet for TT OPB880T51Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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