Transistor output slotted optical sensor featuring a 3.11mm slot width and 1-channel operation. This component offers a 30V collector-emitter breakdown voltage and a 50mA forward current. Designed for through-hole mounting, it operates within a -40°C to 85°C temperature range and has a 100mW power dissipation. The sensor utilizes infrared touchscreen technology with an 890nm wavelength and is RoHS compliant.
MountingChassis Mount, Through Hole, Screw
Power100mW
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Technical Specifications
TT OPB880T55Z technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Collector Current
30mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Output Current
30mA
Mount
Chassis Mount, Through Hole, Screw
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reverse Breakdown Voltage
2V
RoHS Compliant
Yes
Sensing Distance
0.125inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OPB880T55Z Datasheet
Download the complete datasheet for TT OPB880T55Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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