PackageT
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
TT OPS667 technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Max Breakdown Voltage
30V
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
50
Packaging
Bulk
Polarity
NPN
Power Dissipation
100mW
RoHS Compliant
Yes
Wavelength
935nm
Compliance
RoHS
Compliant
Datasheet
TT OPS667 Datasheet
Download the complete datasheet for TT OPS667 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.