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Technical Specifications
TT OPS667 technical specifications.
General
| Package/Case | T |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Max Breakdown Voltage | 30V |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Wavelength | 935nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPS667 Datasheet
Download the complete datasheet for TT OPS667 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.