The UJ3C065030T3S is a high-performance Silicon Carbide (SiC) Cascode JFET device. It combines a normally-on SiC JFET with a Silicon MOSFET to create a normally-off device. This configuration offers low gate charge, low intrinsic capacitance, and excellent reverse recovery characteristics. It is designed for high-efficiency power conversion, featuring a maximum operating temperature of 175°C and ESD protection (HBM Class 2).
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Technical Specifications
United Silicon Carbide UJ3C065030T3S technical specifications.
General
| Drain-Source Voltage (Vds) | 650V |
| Continuous Drain Current (Id) | 85A |
| Drain-Source On-Resistance (Rds(on)) | 27mOhm |
| Maximum Operating Temperature | 175°C |
| Gate Charge (Qg) | 43nC |
| Output Capacitance (Coss) | 320pF |
| Transistor Polarity | N-Channel |
Compliance
| RoHS | Compliant |
| REACH | No SVHC |
Datasheet
United Silicon Carbide UJ3C065030T3S Datasheet
Download the complete datasheet for United Silicon Carbide UJ3C065030T3S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.