General purpose rectifier diode with a 20A average rectified current and 1kV repetitive peak reverse voltage. Features a TO-220AC through-hole package, 20A forward current, and a maximum forward surge current of 355A. Operates across a temperature range of -40°C to 150°C with a reverse recovery time of 400ns. This silicon rectifier is designed for single-phase, single-element applications.
Vishay 20ETF10 technical specifications.
| Average Rectified Current | 20A |
| Package/Case | TO-220AC |
| Current Rating | 20A |
| Forward Current | 20A |
| Height | 8.89mm |
| Lead Free | Contains Lead |
| Length | 10.54mm |
| Max Forward Surge Current (Ifsm) | 355A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV |
| Max Reverse Current | 100uA |
| Max Reverse Voltage (DC) | 1kV |
| Max Surge Current | 355A |
| Mount | Through Hole |
| Output Current | 20A |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | Standard |
| Reverse Recovery Time | 400ns |
| Reverse Voltage | 1kV |
| RoHS Compliant | No |
| DC Rated Voltage | 1kV |
| Width | 4.7mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay 20ETF10 to view detailed technical specifications.
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