N-channel Junction Field-Effect Transistor (JFET) in a TO-205AD package for through-hole mounting. Features a 60V drain-to-source breakdown voltage and a continuous drain current of 990mA. Offers a low drain-to-source resistance of 3 Ohms and a gate-to-source voltage rating of 20V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 6.25W. Tin-matte contact plating and RoHS compliance ensure reliable performance.
PackageTO-205AD
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay 2N6660-E3 technical specifications.
General
Package/Case
TO-205AD
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
990mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
60V
Gate to Source Voltage (Vgs)
20V
Height
6.6mm
Input Capacitance
50pF
Length
9.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.25W
Mount
Through Hole
Nominal Vgs
1.7V
Number of Channels
1
Package Quantity
100
Packaging
Bulk
Polarity
N-CHANNEL
Rds On Max
3R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
1.7V
Width
8.15mm
Compliance
RoHS
Compliant
Datasheet
Vishay 2N6660-E3 Datasheet
Download the complete datasheet for Vishay 2N6660-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
