N-Channel MOSFET, Metal-Oxide Semiconductor FET designed for surface mount applications in a SOT-23-3 package. Features a continuous drain current of 240mA and a drain-to-source breakdown voltage of 60V. Offers a low drain-to-source on-resistance (Rds On) of 3 Ohms and a nominal gate-to-source voltage (Vgs) of 2V. Maximum power dissipation is 350mW, with operating temperatures ranging from -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Vishay 2N7002E technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 240mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 21pF |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Rds On Max | 3R |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Weight | 0.000289oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay 2N7002E Datasheet
Download the complete datasheet for Vishay 2N7002E to view detailed technical specifications.
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