N-Channel MOSFET, Metal-Oxide Semiconductor FET designed for surface mount applications in a SOT-23-3 package. Features a continuous drain current of 240mA and a drain-to-source breakdown voltage of 60V. Offers a low drain-to-source on-resistance (Rds On) of 3 Ohms and a nominal gate-to-source voltage (Vgs) of 2V. Maximum power dissipation is 350mW, with operating temperatures ranging from -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Vishay 2N7002E technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
240mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
7.5R
Drain to Source Voltage (Vdss)
60V
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
21pF
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
350mW
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
No
Weight
0.000289oz
Width
1.4mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay 2N7002E Datasheet
Download the complete datasheet for Vishay 2N7002E to view detailed technical specifications.
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