NPN silicon phototransistor chip for optical sensing applications. Features 70V collector-emitter breakdown voltage and 50mA maximum collector current. Operates within a -40°C to 125°C temperature range with 250mW power dissipation. Packaged in a 3-pin TO-18 metal can with a flat lens for top-view orientation. Through-hole mounting and 80° viewing angle.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power250mW
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Technical Specifications
Vishay BPW76B technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Lens Style
Flat
Max Collector Current
50mA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Consumption
250mW
Power Dissipation
250mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
80°
DC Rated Voltage
70V
Wavelength
850nm
Compliance
RoHS
Compliant
Datasheet
Vishay BPW76B Datasheet
Download the complete datasheet for Vishay BPW76B to view detailed technical specifications.
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