Vishay
GB25RF120K
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, ECONO2PIM-24
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Vishay GB25RF120K technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
3.3V
Height
17mm
Input
Three Phase Bridge Rectifier
Input Capacitance
2.37nF
Length
107.8mm
Max Collector Current
40A
Max Operating Temperature
150°C
Max Power Dissipation
198W
Mount
Chassis Mount, Screw
NTC Thermistor
Yes
Package Quantity
6
Packaging
Bulk
RoHS Compliant
Yes
Width
45.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay GB25RF120K Datasheet
Download the complete datasheet for Vishay GB25RF120K to view detailed technical specifications.
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