The GBU6K-E3 is a silicon bridge rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a 4-pin package type and features a single terminal position. The diode element material is silicon and the diode type is a bridge rectifier diode. The device has a maximum reverse voltage of 800V.
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Technical Specifications
Vishay GBU6K-E3 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Pin Count | 4 |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Breakdown Voltage-Min | 800 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay GBU6K-E3 Datasheet
Download the complete datasheet for Vishay GBU6K-E3 to view detailed technical specifications.
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