The IL66B-2-X016 is a Vishay NPN transistor with a collector emitter saturation voltage of 1V and a current transfer ratio of 1000%. It is designed for DC input and has a maximum operating temperature of 100°C. The transistor can handle a maximum power dissipation of 250mW and is available in a PDIP package, packaged in quantities of 2000 in rail or tube packaging. The IL66B-2-X016 is not RoHS compliant.
PackagePDIP
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Technical Specifications
Vishay IL66B-2-X016 technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 1V |
| Current Transfer Ratio | 1000% |
| Input Type | DC |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IL66B-2-X016 Datasheet
Download the complete datasheet for Vishay IL66B-2-X016 to view detailed technical specifications.
No datasheet is available for this part.