N-channel power MOSFET with 200V drain-source voltage and 18A continuous drain current. Features low 180mΩ drain-source on-resistance and 125W maximum power dissipation. Packaged in a TO-220-5 through-hole mount with a maximum operating temperature of 150°C. Includes fast switching characteristics with turn-on delay of 14ns and fall time of 36ns. RoHS compliant.
PackageTO-220-5
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRC640PBF technical specifications.
General
Package/Case
TO-220-5
Continuous Drain Current (ID)
18A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
9.02mm
Input Capacitance
1.3nF
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
180mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
Weight
0.105822oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRC640PBF Datasheet
Download the complete datasheet for Vishay IRC640PBF to view detailed technical specifications.
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