N-channel power MOSFET for through-hole mounting in a TO-220-5 package. Features a 250V drain-source voltage and 14A continuous drain current. Offers a low 280mΩ drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 125W. Includes fast switching characteristics with turn-on delay of 12ns and turn-off delay of 49ns.
PackageTO-220-5
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRC644PBF technical specifications.
General
Package/Case
TO-220-5
Continuous Drain Current (ID)
14A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
250V
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Height
9.02mm
Input Capacitance
1.2nF
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
280mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
49ns
Turn-On Delay Time
12ns
Weight
0.105822oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRC644PBF Datasheet
Download the complete datasheet for Vishay IRC644PBF to view detailed technical specifications.
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