N-channel power MOSFET featuring 400V drain-source voltage and 5.5A continuous drain current. This through-hole component offers 1 Ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 74W. Designed for efficient switching, it exhibits a turn-on delay of 18ns and a fall time of 14ns. Packaged in a TO-220-5 configuration, it operates across a temperature range of -55°C to 150°C.
PackageTO-220-5
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRC730PBF technical specifications.
General
Package/Case
TO-220-5
Continuous Drain Current (ID)
5.5A
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
400V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
9.02mm
Input Capacitance
700pF
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1R
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
38ns
Turn-On Delay Time
18ns
Weight
0.105822oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRC730PBF Datasheet
Download the complete datasheet for Vishay IRC730PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.