N-Channel Power MOSFET, 500V Drain-to-Source Voltage (Vdss) and 8A Continuous Drain Current (ID). Features 0.85ohm Drain-to-Source Resistance (Rds On Max) and 125W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-220-5 package with through-hole mounting. Offers fast switching characteristics with a 14ns turn-on delay and 21ns fall time. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-220-5
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRC840PBF technical specifications.
General
Package/Case
TO-220-5
Continuous Drain Current (ID)
8A
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Height
9.02mm
Input Capacitance
1.3nF
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
850mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
55ns
Turn-On Delay Time
14ns
Weight
0.105822oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRC840PBF Datasheet
Download the complete datasheet for Vishay IRC840PBF to view detailed technical specifications.
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