N-channel power MOSFET designed for efficient switching applications. Features a 60V drain-source voltage rating and a continuous drain current of 17A. Offers a low on-resistance of 100mΩ, ensuring minimal power loss. Packaged in a TO-220-5 through-hole configuration, this component operates across a wide temperature range of -55°C to 175°C with a maximum power dissipation of 60W. Includes fast switching characteristics with turn-on delay of 12ns and turn-off delay of 25ns.
Vishay IRCZ24PBF technical specifications.
| Package/Case | TO-220-5 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 720pF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.105822oz |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRCZ24PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.