N-Channel Power MOSFET, TO-220AB package, featuring 100V drain-source voltage and 5.6A continuous drain current. Offers a low 0.54 ohm drain-source resistance. Operates with a gate-source voltage up to 20V and boasts a maximum power dissipation of 43W. Suitable for through-hole mounting, this silicon metal-oxide semiconductor FET has a maximum operating temperature of 175°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power43W
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Technical Specifications
Vishay IRF510 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 180pF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 43W |
| Rds On Max | 540mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF510 Datasheet
Download the complete datasheet for Vishay IRF510 to view detailed technical specifications.
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