N-Channel Power MOSFET, D2PAK package, featuring 100V Drain-Source Voltage (Vdss) and 5.6A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 540mR Drain-Source On-Resistance (Rds On Max) and a maximum power dissipation of 43W. Operating temperature range spans from -55°C to 175°C, with switching characteristics including a 6.9ns turn-on delay and 9.4ns fall time. Designed for surface mounting, this single-element transistor is packaged in a TO-263AB/D2PAK-3 configuration.
PackageD2PAK
Current Rating5.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF510S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 5.6A |
| Current Rating | 5.6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 180pF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 43W |
| Rds On Max | 540mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| DC Rated Voltage | 100V |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF510S Datasheet
Download the complete datasheet for Vishay IRF510S to view detailed technical specifications.
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