N-Channel Power MOSFET, D2PAK package, featuring 100V Drain-Source Voltage (Vdss) and 5.6A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 540mR Drain-Source On-Resistance (Rds On Max) and a maximum power dissipation of 43W. Operating temperature range spans from -55°C to 175°C, with switching characteristics including a 6.9ns turn-on delay and 9.4ns fall time. Designed for surface mounting, this single-element transistor is packaged in a TO-263AB/D2PAK-3 configuration.
PackageD2PAK
Current Rating5.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF510S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
5.6A
Current Rating
5.6A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Fall Time
9.4ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
180pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
43W
Rds On Max
540mR
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
DC Rated Voltage
100V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF510S Datasheet
Download the complete datasheet for Vishay IRF510S to view detailed technical specifications.
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