N-Channel Power MOSFET, 100V Drain-Source Voltage, 5.6A Continuous Drain Current, and 0.54ohm Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a 20V Gate-Source Voltage rating and a maximum power dissipation of 43W. Designed for surface mounting in a TO-263-3 (D2PAK-3) package, it offers fast switching with a 6.9ns turn-on delay and 9.4ns fall time. Operating temperature range is -55°C to 175°C, with 180pF input capacitance.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF510STRRPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 180pF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF510STRRPBF Datasheet
Download the complete datasheet for Vishay IRF510STRRPBF to view detailed technical specifications.
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