N-Channel Power MOSFET featuring 100V Drain-Source Voltage (Vdss) and 9.2A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 270mΩ Drain-Source On-Resistance (Rds On) and a maximum power dissipation of 60W. Designed for through-hole mounting in a TO-220AB package, it exhibits fast switching characteristics with a turn-on delay of 8.8ns and a fall time of 20ns. Operating temperature range spans from -55°C to 175°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF520 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
9.2A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
360pF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
270mR
RoHS Compliant
No
Turn-Off Delay Time
19ns
Turn-On Delay Time
8.8ns
DC Rated Voltage
100V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF520 Datasheet
Download the complete datasheet for Vishay IRF520 to view detailed technical specifications.
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