N-Channel Power MOSFET featuring 100V Drain-Source Voltage (Vdss) and 9.2A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 270mΩ Drain-Source On-Resistance (Rds On) and a maximum power dissipation of 60W. Designed for through-hole mounting in a TO-220AB package, it exhibits fast switching characteristics with a turn-on delay of 8.8ns and a fall time of 20ns. Operating temperature range spans from -55°C to 175°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF520 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 360pF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 8.8ns |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRF520 Datasheet
Download the complete datasheet for Vishay IRF520 to view detailed technical specifications.
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