N-channel MOSFET with 100V drain-source voltage and 14A continuous drain current. Features 160mΩ maximum drain-source on-resistance and 88W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB through-hole mount, this component offers fast switching with turn-on delay of 10ns and fall time of 24ns.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power88W
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Technical Specifications
Vishay IRF530 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
14A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
160mR
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
670pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
88W
Radiation Hardening
No
Rds On Max
160mR
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
23ns
Turn-On Delay Time
10ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF530 Datasheet
Download the complete datasheet for Vishay IRF530 to view detailed technical specifications.
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