N-channel power MOSFET featuring 100V drain-source voltage and 14A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 0.16ohm drain-to-source resistance. Designed for surface mounting in a D2PAK package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 88W. Key switching characteristics include a 10ns turn-on delay and 23ns turn-off delay.
PackageD2PAK
Current Rating14A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF530S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
100V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
670pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
160mR
RoHS Compliant
No
Turn-Off Delay Time
23ns
Turn-On Delay Time
10ns
DC Rated Voltage
100V
Weight
0.211644oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF530S Datasheet
Download the complete datasheet for Vishay IRF530S to view detailed technical specifications.
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