N-channel power MOSFET featuring 100V drain-source voltage and 14A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 0.16ohm drain-to-source resistance. Designed for surface mounting in a D2PAK package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 88W. Key switching characteristics include a 10ns turn-on delay and 23ns turn-off delay.
PackageD2PAK
Current Rating14A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF530S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 670pF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 160mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF530S Datasheet
Download the complete datasheet for Vishay IRF530S to view detailed technical specifications.
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