N-Channel Power MOSFET, 100V Vdss, 14A continuous drain current, and 160mΩ Rds On. Features a 4V threshold voltage and 20V gate-source voltage rating. Surface mountable in a TO-263-3 (D2PAK-3) package, this silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 10ns and fall time of 24ns. Maximum power dissipation is 3.7W with an operating temperature range of -55°C to 175°C.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power3.7W
Quick Jump:
Technical Specifications
Vishay IRF530SPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 160mR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.7W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.7W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.068654oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF530SPBF Datasheet
Download the complete datasheet for Vishay IRF530SPBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
