N-Channel Power MOSFET, 100V Drain-Source Voltage, 14A Continuous Drain Current, and 0.16 Ohm Drain-Source Resistance. This silicon Metal-oxide Semiconductor FET features a D2PAK surface-mount package, 88W maximum power dissipation, and operates from -55°C to 175°C. Key switching parameters include a 10ns turn-on delay, 23ns turn-off delay, and 24ns fall time, with an input capacitance of 670pF.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF530STRR technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
14A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
100V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
670pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
160mR
RoHS Compliant
No
Turn-Off Delay Time
23ns
Turn-On Delay Time
10ns
Weight
0.211644oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF530STRR Datasheet
Download the complete datasheet for Vishay IRF530STRR to view detailed technical specifications.
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