N-Channel Power MOSFET, TO-220-3 package, features 100V drain-source voltage and 28A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 77mΩ drain-source resistance. Operating across a wide temperature range from -55°C to 175°C, it boasts a maximum power dissipation of 150W. Key switching characteristics include a 11ns turn-on delay and 43ns fall time.
PackageTO-220-3
Voltage100V
Current28A
Current Rating28A
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Technical Specifications
Vishay IRF540 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 28A |
| Current | 28A |
| Current Rating | 28A |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.7nF |
| Lead Free | Contains Lead |
| Length | 10.51mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 77mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 11ns |
| Voltage | 100V |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF540 Datasheet
Download the complete datasheet for Vishay IRF540 to view detailed technical specifications.
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