
N-Channel Power MOSFET featuring 100V drain-source voltage and 28A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 77mΩ drain-source on-resistance. Designed for surface mounting in a TO-263AB (D2PAK-3) package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 150W. Key switching characteristics include an 11ns turn-on delay and 43ns fall time.
Vishay IRF540STRR technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 28A |
| Current Rating | 28A |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.7nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 77mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRF540STRR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
