N-Channel Power MOSFET featuring 100V drain-source voltage and 28A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 77mΩ drain-source on-resistance. Designed for surface mounting in a TO-263AB (D2PAK-3) package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 150W. Key switching characteristics include an 11ns turn-on delay and 43ns fall time.
PackageTO-263-3
Current Rating28A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF540STRR technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
28A
Current Rating
28A
Drain to Source Resistance
77mR
Drain to Source Voltage (Vdss)
100V
Fall Time
43ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.7nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
77mR
RoHS Compliant
No
Turn-Off Delay Time
53ns
Turn-On Delay Time
11ns
DC Rated Voltage
100V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF540STRR Datasheet
Download the complete datasheet for Vishay IRF540STRR to view detailed technical specifications.
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