N-Channel Power MOSFET, TO-220AB package, featuring a 200V drain-source breakdown voltage and a maximum continuous drain current of 3.3A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 1.5 ohms at a nominal gate-source voltage of 4V. With a maximum power dissipation of 36W and operating temperatures from -55°C to 150°C, it is suitable for through-hole mounting. The component is RoHS compliant and includes fast switching characteristics with turn-on delay times around 8.2ns and fall times of 8.9ns.
PackageTO-220AB
Voltage200V
Current Rating3.3A
MountingThrough Hole
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Technical Specifications
Vishay IRF610PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | 3.3A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 8.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 140pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8.2ns |
| Voltage | 200V |
| DC Rated Voltage | 200V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF610PBF Datasheet
Download the complete datasheet for Vishay IRF610PBF to view detailed technical specifications.
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