N-Channel Power MOSFET, 250V Vdss, 2.7A Continuous Drain Current (ID). Features 2 Ohm Drain to Source Resistance (Rds On Max) and 4V Nominal Vgs. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 36W. Packaged in a TO-220AB, 3-pin through-hole mount configuration, this silicon Metal-oxide Semiconductor FET is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF614PBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.7A
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
250V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
140pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF614PBF Datasheet
Download the complete datasheet for Vishay IRF614PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.