N-Channel Power MOSFET, featuring a 250V drain-source voltage (Vdss) and 2.7A continuous drain current (ID). This silicon, metal-oxide semiconductor FET offers a low 2-ohm drain-to-source resistance (Rds On Max). Designed for surface mounting in a D2PAK package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 36W. Key switching characteristics include a 7ns turn-on delay and a 7ns fall time.
PackageD2PAK
Current Rating2.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF614S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
2.7A
Current Rating
2.7A
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
250V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
36W
Rds On Max
2R
RoHS Compliant
No
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
DC Rated Voltage
250V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF614S Datasheet
Download the complete datasheet for Vishay IRF614S to view detailed technical specifications.
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