N-Channel Power MOSFET, featuring a 250V drain-source voltage (Vdss) and 2.7A continuous drain current (ID). This silicon, metal-oxide semiconductor FET offers a low 2-ohm drain-to-source resistance (Rds On Max). Designed for surface mounting in a D2PAK package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 36W. Key switching characteristics include a 7ns turn-on delay and a 7ns fall time.
PackageD2PAK
Current Rating2.7A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF614S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | 2.7A |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 140pF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 36W |
| Rds On Max | 2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 250V |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF614S Datasheet
Download the complete datasheet for Vishay IRF614S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.