IRF620

N-Channel Power MOSFET, featuring a 200V Drain-to-Source Voltage (Vdss) and 5.2A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor field-effect transistor offers a low 0.8 Ohm Rds On Max and is packaged in a TO-220AB configuration for through-hole mounting. Key electrical characteristics include a 20V Gate-to-Source Voltage (Vgs), 260pF input capacitance, and fast switching times with a 7.2ns turn-on delay. Operating across a temperature range of -55°C to 150°C, it supports a maximum power dissipation of 50W.