
N-Channel Power MOSFET, 200V Vdss, 5.2A continuous drain current, and 800mΩ drain-source on-resistance. Features a TO-263-3 surface mount package, 20V gate-source voltage, and 3W power dissipation. Includes 7.2ns turn-on delay and 13ns fall time, with 260pF input capacitance. Operates from -55°C to 150°C and is RoHS compliant.
Vishay IRF620SPBF technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800MR |
| Dual Supply Voltage | 200V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 260pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7.2ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRF620SPBF to view detailed technical specifications.
No datasheet is available for this part.
