N-Channel Power MOSFET featuring 200V drain-source voltage and 5.2A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 800mΩ drain-source on-resistance. Designed for surface mounting in a TO-263AB package, it operates from -55°C to 150°C with a maximum power dissipation of 50W. Key switching characteristics include a 7.2ns turn-on delay and a 13ns fall time.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF620STRLPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
5.2A
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
800mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
260pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
800mR
RoHS Compliant
Yes
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.2ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF620STRLPBF Datasheet
Download the complete datasheet for Vishay IRF620STRLPBF to view detailed technical specifications.
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