N-Channel Power MOSFET, 200V Vdss, 5.2A continuous drain current, and 0.8 ohm drain-source on-resistance. Features a TO-263-3 surface mount package with a maximum power dissipation of 3W. Operates across a temperature range of -55°C to 150°C, with typical turn-on delay of 7.2ns and fall time of 13ns. This silicon Metal-oxide Semiconductor FET is RoHS compliant and supplied on tape and reel.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF620STRRPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
5.2A
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
800mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
260pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
800mR
RoHS Compliant
Yes
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.2ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF620STRRPBF Datasheet
Download the complete datasheet for Vishay IRF620STRRPBF to view detailed technical specifications.
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