N-Channel Power MOSFET, featuring a 250V drain-source breakdown voltage and a continuous drain current of 4.4A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 1.1 Ohm. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 50W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and a 12ns fall time.
PackageTO-220AB
Current Rating4.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF624PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
4.4A
Current Rating
4.4A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
1.1R
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
260pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
1.1R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
7ns
DC Rated Voltage
250V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF624PBF Datasheet
Download the complete datasheet for Vishay IRF624PBF to view detailed technical specifications.
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