N-Channel Power MOSFET, featuring a 250V drain-source breakdown voltage and a continuous drain current of 4.4A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 1.1 Ohm. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 50W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and a 12ns fall time.
PackageTO-220AB
Current Rating4.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF624PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 4.4A |
| Current Rating | 4.4A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 1.1R |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 260pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 1.1R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 250V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF624PBF Datasheet
Download the complete datasheet for Vishay IRF624PBF to view detailed technical specifications.
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