Vishay
IRF630
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220-3
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF630 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 9.4ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF630 Datasheet
Download the complete datasheet for Vishay IRF630 to view detailed technical specifications.
No datasheet is available for this part.