N-channel power MOSFET featuring 200V drain-source voltage and 9A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 400mΩ drain-source on-resistance and 4V threshold voltage. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 74W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 9.4ns turn-on delay and 20ns fall time.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power74W
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Technical Specifications
Vishay IRF630PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 9.4ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF630PBF Datasheet
Download the complete datasheet for Vishay IRF630PBF to view detailed technical specifications.
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