IRF630S

N-Channel Power MOSFET, 200V Drain-Source Voltage, 9A Continuous Drain Current, and 400mΩ Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a 1-element design with a TO-263-3 surface mount package. Key specifications include a maximum power dissipation of 74W, input capacitance of 800pF, and fast switching times with a fall time of 20ns. Operating temperature range is -55°C to 150°C.