N-Channel Power MOSFET, featuring a 200V drain-source voltage (Vdss) and a continuous drain current (ID) of 9A. This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance (Rds On) of 400mΩ. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 3W. Key switching characteristics include a turn-on delay time of 9.4ns and a fall time of 20ns. The component is ROHS compliant and packaged in a TO-263-3 (SMD-220) package on tape and reel.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF630STRLPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 800pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 9.4ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF630STRLPBF Datasheet
Download the complete datasheet for Vishay IRF630STRLPBF to view detailed technical specifications.
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