N-Channel Power MOSFET, featuring a 200V drain-source voltage (Vdss) and a continuous drain current (ID) of 9A. This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance (Rds On) of 400mΩ. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 3W. Key switching characteristics include a turn-on delay time of 9.4ns and a fall time of 20ns. The component is ROHS compliant and packaged in a TO-263-3 (SMD-220) package on tape and reel.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF630STRLPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
9A
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
400mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
800pF
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
400mR
RoHS Compliant
Yes
Turn-Off Delay Time
39ns
Turn-On Delay Time
9.4ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF630STRLPBF Datasheet
Download the complete datasheet for Vishay IRF630STRLPBF to view detailed technical specifications.
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