N-Channel MOSFET, TO-220AB package, featuring 250V drain-source voltage and 8.1A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.45-ohm drain-source resistance. Key switching characteristics include a 9.6ns turn-on delay and 19ns fall time. Maximum power dissipation is rated at 74W, with an operating temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF634 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
8.1A
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
250V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
770pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
450mR
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
42ns
Turn-On Delay Time
9.6ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF634 Datasheet
Download the complete datasheet for Vishay IRF634 to view detailed technical specifications.
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