N-channel MOSFET transistor featuring a 200V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 180mΩ drain-source on-resistance and 125W maximum power dissipation. Operating across a -55°C to 150°C temperature range, it includes a 4V threshold voltage and fast switching times with turn-on delay of 14ns and fall time of 36ns. Packaged in a TO-220AB case, this RoHS compliant device is suitable for high-power switching applications.
PackageTO-220AB
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF640PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 200V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF640PBF Datasheet
Download the complete datasheet for Vishay IRF640PBF to view detailed technical specifications.
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