
N-Channel Power MOSFET, D2PAK package, featuring 200V drain-source voltage and 18A continuous drain current. Offers a low 180mΩ drain-source on-resistance. Designed for surface mounting with a maximum power dissipation of 130W. Operates across a temperature range of -55°C to 150°C, with typical turn-on delay of 14ns and fall time of 36ns.
Vishay IRF640S technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 180mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 200V |
| Weight | 0.079014oz |
| Width | 9.65mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRF640S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
